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IRFP460 Transistor

IRFP460 Transistor

Transistor Type: MOSFET
Control Channel Type: N-Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 500 V

Transistor Type: MOSFET
Control Channel Type: N-Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 500 V

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7 00 €

Delivery by Thu, 25 Jun

14,00 € shipping cost

Sent from Greece

From Rhoelect 4.0 (26)

4.0 (26 reviews)

Greece

See Microelectronic Components on the page of Rhoelect

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Description

Description

Transistor Type: MOSFET
Control Channel Type: N-Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 100 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Manufacturer

See full description

Description

Transistor Type: MOSFET
Control Channel Type: N-Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 100 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Manufacturer

7,00 €

14,00 € shipping cost