The advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low resistance per silicon area. This advantage, combined with the fast switching speed and rugged device design for which HEXFET power MOSFETs are widely known, provides the designer with a highly efficient and reliable device for use in a wide variety of applications.
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Image from a review
IRF540N Mosfet N-Channel 33A Transistor
Description
Description
The advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low resistance per silicon area. This advantage, combined with the fast switching speed and rugged device design for which HEXFET power MOSFETs are widely known, provides the designer with a highly efficient and reliable device for use in a wide variety of applications.