Transistors

N-channel Mosfet Fds6690a 6690 Mosfet

The FDS6690AS is designed to replace a single SO-8 MOSFET and a Schottky diode in synchronized DC:DC power supplies. This 30V MOSFET is designed to optimize power conversion efficiency, providing low...

The FDS6690AS is designed to replace a single SO-8 MOSFET and a Schottky diode in synchronized DC:DC power supplies. This 30V MOSFET is designed to optimize power conversion efficiency, providing low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the...

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Description

Description

The FDS6690AS is designed to replace a single SO-8 MOSFET and a Schottky diode in synchronized DC:DC power supplies. This 30V MOSFET is designed to optimize power conversion efficiency, providing low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6690AS as a low-side switch in asynchronous rectification is close to the performance of the FDS6690A in parallel connection with a Schottky diode.

  • DC/DC converter
  • Low-side notes

Features:

  • 10 A, 30 V. RDS(ON) max = 12 mΩ @ V GS = 10 V
  • RDS(ON) max = 15 mΩ @ V GS = 4.5 V
  • Includes Schottky SyncFET diode
  • Low gate charge (typically 16nC)
  • High trench technology performance for ultra-low RDS(ON)
  • High power and current handling capability

Manufacturer

See full description

Description

The FDS6690AS is designed to replace a single SO-8 MOSFET and a Schottky diode in synchronized DC:DC power supplies. This 30V MOSFET is designed to optimize power conversion efficiency, providing low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6690AS as a low-side switch in asynchronous rectification is close to the performance of the FDS6690A in parallel connection with a Schottky diode.

  • DC/DC converter
  • Low-side notes

Features:

  • 10 A, 30 V. RDS(ON) max = 12 mΩ @ V GS = 10 V
  • RDS(ON) max = 15 mΩ @ V GS = 4.5 V
  • Includes Schottky SyncFET diode
  • Low gate charge (typically 16nC)
  • High trench technology performance for ultra-low RDS(ON)
  • High power and current handling capability

Manufacturer

4,98 €
14,00 €   shipping cost