The IRF640N N-Channel Power MOSFET from Infineon in TO-220 package is a high-power transistor with a maximum voltage of 200V, current of 18A, on-resistance of 150mΩ, and a power dissipation of 150W. Ideal for power switch applications, power supplies, and industrial circuits, it offers fast response, reliability, and efficient power transfer in demanding electronic environments.
Description
Description
The IRF640N N-Channel Power MOSFET from Infineon in TO-220 package is a high-power transistor with a maximum voltage of 200V, current of 18A, on-resistance of 150mΩ, and a power dissipation of 150W. Ideal for power switch applications, power supplies, and industrial circuits, it offers fast response, reliability, and efficient power transfer in demanding electronic environments.