AO4932

• Transistor Type: MOSFET
• Control Channel Type: N-Channel
• Maximum Power Dissipation (Pd): 2 W
• Maximum Drain-Source Voltage (|Vds|): 30 V
• Maximum Gate-Source Voltage (|Vgs|): 12(20) V
• Maximum Gate Threshold Voltage (|Vgs(th)|): 2.1 V
• Maximum Drain Current (|Id|): 11(8) A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 7 nC
• Rise Time (tr): 2.4(3.5) nS
• Output Capacitance (Coss): 128(110) pF
• Maximum On-State Resistance (Rds): 0.0125(0.019) Ohm
• Package: SO-8