The PNY MN16GSD42666-SB RAM upgrades a laptop's memory with a capacity of 16 GB and a speed of 2666 MHz. It features a 260-pin SO-DIMM form factor and CAS Latency 19 timing, with a Non-ECC Unbuffered architecture.
It operates at 1.2 V and supports JEDEC specifications and Plug & Play installation.
- Memory type: DDR4
- Capacity: 16 GB
- Number of modules: 1
- Memory speed: 2666 MHz
- CAS Latency timing: 19
- Form factor: 260-pin SO-DIMM
- Architecture: Non-ECC Unbuffered
- Operating voltage: 1.2 V
- Compatibility: Laptop
- Installation: Plug & Play
- Specifications: JEDEC
- Usage: Everyday use and demanding applications
- Product Number
- MN16GSD42666-SB
Main Specifications
- Total Capacity
- 16 GB
- Type
- DDR4
- Computer Type
- Laptop
- Size
- SO-DIMM GB
- Device Group
- Simple Everyday
- UDIMM
- No
- CUDIMM
- No
Special Features
- Modules
- 1
- CAS Latency
- 19
- RGB Lighting
- No
Important information
Specifications are collected from official manufacturer websites. Please verify the specifications before proceeding with your final purchase. If you notice any problem you can report it here.