This work is a study on the deposition of a-Si:H thin films produced from a (SiH4 + H2) mixture using plasma-assisted CVD processes. For numerical simulation, the Monte Carlo method was utilized. The chosen collision kinetic model allowed for the study of physicochemical phenomena and collision properties within the reactor volume and on the substrate surface.

To calculate the reactivity probabilities of SiHx radicals with the surface (SFRP), a new concept was introduced: the site reactivity probability (SRP). This newly calculated probability enables the analytical calculation of sticking, recombination, and surface reactivity probabilities. It is noteworthy that this is the first analytical model to calculate these probabilities.

For gas temperatures ranging from 373 K to 750 K, the average calculated SFRP value for SiH3 is 0.30 ± 0.08. This value matches that measured in the works of Kessels and Hoefnagels. Additionally, a fluid aspect treatment was presented by solving the diffusion equation.